| 摘要 |
PURPOSE:To obtain a pattern forming material having high sensitivity and resolutive at an exposure band range of the neighboring of 313nm by incorporating a specific aromatic azido compd. and a high polymer compd. in the titled composition. CONSTITUTION:The negative type photoresist is composed of the high polymer compd. and the aromatic azido compd. which has the maximal absorption at the neighboring of 270-350nm, and forms a photoreaction product having less absorption at the neighboring of said wavelength at the time of exposing in the photoresist film. Accordingly, as the effect of reflection from an underground substrate is reduced and the titled resist is a photoresist having discoloration at the exposure wavelength of the neighboring of 313nm, even if said resist is a negative type, light gets to some extent in the photoresist film whereby the pattern having an inversed trapezoid is not formed, and the vertical fine pattern is obtd. The wavelength at the neighboring of 313nm showing the discoloration due to the light is the band range of about 305-330nm. |
