| 摘要 |
PURPOSE:To decrease the effect of the secular degeneration of the surface of an active layer on a source resistor, etc., and to reduce the instability of operation by using a thick layer having comparatively high carrier density as the active layer except a gate-channel region. CONSTITUTION:A silicon injecting layer 18 is formed onto a GaAs substrate 19 having high resistance. A protective insulating film 17 is shaped, and thermally treated, thus forming the comparatively thick active layer 18. Here, a resist pattern 20 with an opening section is molded onto the protective insulating film 17, and the film 17 is removed selectively using the pattern as a mask. A layer 21 into which ions generating a shallow acceptor level are injected is formed. The resist 20 is removed, the whole is thermally treated, a source electrode 22 and a drain electrode 24 are shaped, and a Schottky junction gate electrode 25 is molded in the gate- channel resion in a self-matching shape. |
