| 摘要 |
PURPOSE:To inexpensively obtain a semiconductor disc memory which has a thin semiconductor substrate and is free from deformation and failure by adhering a metallic plate having an approximate coefft. of thermal expansion to a single crystal semiconductor block then cutting the same to make a substrate and forming a recording layer. CONSTITUTION:After one end of a single crystal semicoductor block 8 of a circular cylindrical shape of silicon or the like is flattened, a metallic plating layer 4 is formed on this end surface, and a metallic plate 5 of a circular shape of molybdenum or the like having a coefft. of thermal expansion close to that of the semiconductor material is adhered thereto. Thence, the block 8 is cut in parallel with the end face adhered with the plate 5 near said end face, whereby a semiconductor substrate 1 is obtained. The surface of the substrate 1 on the side opposite from the surface adhered with the plate 5 is finished to a specular surface, and an SiO2 film 2 and an Si3N4 film 3 are formed successively thereon, whereby the intended semiconductor disc memory is obtained. Thereby, the deformation in the cutting process is prevented, and the substrate 1 is obtained thinly and inexpensively. |
