| 摘要 |
PURPOSE:To shorten drastically the time for a bonding by providing the upper row or the lower row of the difference in level with a mark for sight when mounting a semiconductor laser chip, wherein every layer including an active layer is formed on a semiconductor substrate having the difference in level, is mounted on a support. CONSTITUTION:Every layer including an active layer is constituted on a substrate having the difference in level for obtaining stable lateral mode oscillation to be made into a semiconductor laser of stepped substrate type. Namely an N type GaAs substrate 1 is provided with step and on the whole surface including this, an N type Ga1-xAlxAs clad layer 2, a nondope Ga1-2AlyAs active layer 3, a P type Ga 1-zAlzAs clad layer 4, an N type GaAs layer 5 are laminatingly piled up and on the stepped part of the layer 5 a Zn diffusion layer 6 entering the layer 4 is formed, a P-side electrode consisting of a Ti layer contacting with this, a Pt layer 8 and an Au layer 9 is extended on the layer 5 to be attached. Further the back of the substrate 2 is provided with an N-side ohmic electrode 10. In said constitution on a part of the layer 9 a stripe-shaped opening 11 is furnished through etching in parallel to the layer 6 to make it into a mark for fixing a support. |
