| 摘要 |
PURPOSE:To obtain a multi-emitter structural bipolar transistor unnecessitating high fine processing by a method wherein an emitter and a base protruding in a convex type are isolated and insulated using covering characteristic of an organic matter depending to unevenness of a substrate. CONSTITUTION:An N<-> type collector layer 2, a P<+> type base layer 3, an N<+> type emitter layer 4 are made to grow on the N<+> type silicon substrate 1, and selective etching is performed to form concave grooves reaching the N<-> type collector layer 2. Then a P<+> type base connecting layer 6 is made to diffuse in the surface of the concave grooves, a photo resist 8 is applied, and opening parts 0 are provided at the corners of respective protruding parts. Then the P<+> type base connecting layers 6 at the parts on the opening parts 0 are removed. An SiO<2> film 9 is formed, a polyimide resin film 10 is applied thereon, the convex protruding parts are made to open applying film thickness distribution characteristic to be generated when the organic matter is applied, and the emitter electrode 11 is formed. Because the openings can be formed by self-alignment, the device can be manufactured simply. |
