| 摘要 |
PURPOSE:To enhance electrostatic withstand voltage of a metal oxide film semiconductor integrated circuit by a method wherein the first conductive type impurity ions are implanted between the second conductive type diffusion layer and the first conductive type stopper layer formed in the first conductive type substrate in the same process with formation of an offset region. CONSTITUTION:After a P<->-well, etc., are formed in an N<-> type Si substrate 205, a source and drain 202 and stoppers on the other side are formed by P<+> type impurity diffusion, and then the other source and drain and stoppers 201 are formed by N<+> type impurity diffusion. Then after a gate oxide film 210, a gate electrode 211 are formed, P<+> ions are implanted to form the offset region 209 and the ion implanted layers, and then the other offset region and ion implanted layers 208 are formed by N<+> type ion implantation. Accordingly electrostatic withstand voltage of the device can be enhanced without incresing number of process. |
