发明名称 DRY ETCHING DEVICE
摘要 PURPOSE:To effectively perform etching under high accuracy and high quality by a method wherein an electrode is formed in porous or mesh shape and the flow of etching gas is equalized. CONSTITUTION:A high-frequency voltage is applied across a grounded positive electrode 1 and a negative electrode 2 arranged by facing each other in a reactive tank and reactive gas introduced in the tank is activated to apply etching treatment to processed substances 3 held on the electrode 2. At that time, porous or meshshaped holes 5 are formed at least in the electrode 2 out of each electrode 1, 2. In this way, reactive gas at the time of etching is uniformly supplied toward the electrode 2 and equal etching action can be obtained.
申请公布号 JPS5766640(A) 申请公布日期 1982.04.22
申请号 JP19800141485 申请日期 1980.10.09
申请人 MITSUBISHI DENKI KK 发明人 WATAKABE YAICHIROU;KINOSHITA SHIGEJI
分类号 H01L21/302;H01J37/32;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址
您可能感兴趣的专利