| 摘要 |
For preparing coarse-crystal or single-crystal metal films by vapor-depositing or atomizing a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminum alloy or a Ti-V alloy with a vanadium content of more than about 70 atom percent is first precipitated on the substrate which is cooled to a temperature below about -90 DEG C. Subsequently, the amorphous layer is recrystallized by heating the substrate with the deposited metal layer to at least room temperature and maximally 300 DEG C. The so-prepared metal films have particular application to integrated circuits.
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