| 摘要 |
PURPOSE:To obtain a stable oscillation mode of a low-threshold current up to a higher frequency range in a semiconductor laser device by a method wherein a P-N junction is formed without use of Si2N4 mask which causes crystal defects, and a hetero-junction is formed in the lateral direction of an active layer. CONSTITUTION:N-AlGaAs layer 32, N-GaAs layer 33 and N-AlGaAs layer 34, P-AlGaAs layer 35 and N-GaAs layer 36 in turn are epitaxially formed on N-GaAs substrate 31. A V-shaped groove 37a which is deep down to the fixed depth of the layer 32 is formed, and P-AlGaAs 38 and P-GaAs layer 39 are epitaxially formed in turn, producing a P type layer 40 by self-implantation. After attaching electrodes 41 and 42, it is cut as shown along the chain lines. Forward biasing electrodes 41 and 42, the majority of current flows as shown by the arrow, and almost no current flows through other parts, concentrating to a P-N junction of the layer 33 of which a diffusion potential is low. Therefore, a high-efficiency laser oscillation is obtained in the active region 43. On the side of the layer 33, a forbidden band width is large, and the P type layer 38 of a small refractive index is laid, so that an oscillation mode which is stable up to high temperature and has a low threshold level is obtained. |
