| 摘要 |
PURPOSE:To simplify a manufacturing process for photo-masks with high accuracy, by overexposing a resist film, making a mark, detecting the mark position with beam scan, and determining correction f mobile stage deflection. CONSTITUTION:A mask substrate 1 coated with a Cr-film 2 and painted with a resist film 3 is mounted on a stage 20. The stage 20 is moved by a certain amount and exposed with successive beam. Outside a pattern scan region of the resist film 3, a mark 5 of L-shaped concave is formed with overexposure prior to exposure. Coordinates of mark position are obtained for every movement of the stae 20 by detecting electron 31 reflected from scanning beam 30, and are compared with coordinates of the stage 20 position by means of laser measure 21. Correction given to a deflector 16 is calculated and determined with a computer. This makes the mark surface as high as the scan surface and enables highly accurate correction. Particularly, manufacture of photo-masks is simplified, because it is unnecessary to put the mark on the substrate. |
