| 摘要 |
PURPOSE:To enhance precision of ion implantation of a semiconductor device by a method wherein after the second resist layer to cover an opening other than the desired opening is formed on the first resist layer used for patterning of an insulating film on a semiconductor substrate, ion implantation is performed. CONSTITUTION:The openings are provided selectively in the insulating film 2 provided on the Si substrate 1 being provided with a base region 5 utilizing the first resist layer 4, and after the second resist layer 4' to cover the undesired opening is formed on the first resist layer 4, impurity ions of P, etc., are implanted to form an emitter region 3. Accordingly when the oxide film is formed shallowly for fine formation, piercing through of ion through the oxide film can be prevented. |
