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发明名称
Verfahren zum Herstellen hochreiner Kristalle aus halbleitenden Verbindungen
摘要
申请公布号
DE1644021(A1)
申请公布日期
1971.03.25
申请号
DE19671644021
申请日期
1967.10.17
申请人
SIEMENS AG
发明人
GRABMAIER,JOSEF,DIPL.-PHYS.DR.
分类号
C30B27/00
主分类号
C30B27/00
代理机构
代理人
主权项
地址
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