发明名称 GATE CONSTRUCTION FOR ION INJECTION BUBBLE
摘要 PURPOSE:To increase the overall margin of a device entirely and the operating stability of bubbles, by increasing the margin of a readout transfer operation, through the connection of a part of a minor loop to a part of a major loop. CONSTITUTION:In the arrangement of a major loop 16-1, the loop 16-1 is sectioned at positions X1, X2... corresponding to minor loops 17-1-17-N, and extended patterns Y0, Y1... which are extended toward corresponding loops from the sectioned position are provided. A readout transfer gate 26 is composed of the extended pattern, the loops 17 and an N type conductor 24. In the gate 26, the transfer-out operation of bubbles from the loops 17 is made between the extended patterns Y0, Y1... and the minor loop, the operating margin is extended and the stabilization of the circuit operation can be obtained.
申请公布号 JPS5758291(A) 申请公布日期 1982.04.07
申请号 JP19800133293 申请日期 1980.09.25
申请人 FUJITSU KK 发明人 MIYASHITA TSUTOMU;OOHASHI MAKOTO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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