| 摘要 |
PURPOSE:To realize a memory LSI in high speed and highly stable operation, by locating digit lines differentially in close location. CONSTITUTION:Data lines D0, -D0 on which differential readout signals are appeared, are located in parallel closingly, and a memory cell MC is connected to only one cross point among cross points between one word line W and DW. When a memory is read out, the D0, -D0 are precharged to the same voltage, and the said W is selected to read out the cell, and the DW is selected and a dummy cell DM connected to the -D0 which is not connected to the cell is read out at the same time, and a differential voltage appeared on the D0, -D0 is differentially amplified at a preamplifier PA. |
