发明名称 DEFFUSING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To diffuse a sheet resistor between lots of a wafer with less irregularity by exposing and using fresh surface at every predetermined number of times of a solid diffusion source. CONSTITUTION:As the number of uses of a solid diffusion source increases, the volatile amount of impurity decreases. Accordingly, the sheet resistance rhos of the wafer will decreases. When the surface of the solid diffusion source is polished when it is lowered to the prescribed degree to expose new surface and reuse it, it is so diffused as to approximately maintain the sheet resistance rhos of the wafer always constantly.
申请公布号 JPS5756926(A) 申请公布日期 1982.04.05
申请号 JP19800131848 申请日期 1980.09.22
申请人 SHIN NIPPON DENKI KK 发明人 YONEZAWA KEISHIROU
分类号 H01L21/223;(IPC1-7):01L21/22 主分类号 H01L21/223
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