| 摘要 |
PURPOSE:To prevent O2 from mixing in a nitride film by conducting a pretreatment process wherein Si is heated in an evacuated reaction pipe, heating the Si in the atmosphere of N2 or nitrogeneous compound gas and thereby forming a thermonitride film. CONSTITUTION:The reaction pipe having a packing 8 whereby the closensess of contact between a core pipe 3 and cap 5 is made excellent is filled up with inert gas. An Si wafer is put in the reaction pipe and, the degree of vacuum of the pupe being raised to 10<-6> Torr approximately, it is heated for 1-2hr at a temperature causing no oxidation by oxidizing adsorbed substances, whereby the adsorbed substances on the surface thereof is removed. Next, ater the wafer is heated preliminarily up to 900-1,300 deg.C, nitrogen gas is introduced and the thermonitride Si film is formed on the wafer 1. Since O2 is prevented from mixing in the nitride film nearly completely by this constitution, the thermonitride film having an excellent quality is obtained. |
