| 摘要 |
PURPOSE:To single-crystallize extremely over wide range by accumulating a non- single-crystalline layer made of polycrystalline Si via an SiO2 film on an Si substrate, forming the non-single crystalline layer in mesa state when the layer is emitted with energy beam to single crystallize it, and starting the beam from the starting point of emission at the exposed substrate therebetween. CONSTITUTION:A non-single crystalline layer 3 made of polycrystalline Si is accumulated via an SiO2 film 2 on a single crystalline Si substrate 1, an energy beam is emitted, the layer 3 and the film 2 are formed in mesa state by etching when the layer 3 is single-crystallized, and the single crystalline region 9 of the substrate 1 is exposed in lattice state between insular regions. Then, one point S of the exposed single-crystalline region 9 is selected as a starting point, an energy beam 5 of an argon laser or the like of 10-18W of power is scanned from the starting point along the sides of the insular regions to convert the layer 3 into single crystal 5b, the next scan is overlapped by 50-60% with the previous scanning line width, thereby single-crystallizing the region 5c not single-crystallized. |
