发明名称 |
BAND GAP OF PHOTORESPONSIVE AMORPHOUS ALLOYS AND DEVICES |
摘要 |
A semiconductor material comprises amorphous Si containing F (a- Si: F) together with a band gap increasing modifier (e.g. C or N). H may also be incorporated in the material which may be doped. The material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices. |
申请公布号 |
AU7502081(A) |
申请公布日期 |
1982.03.18 |
申请号 |
AU19810075020 |
申请日期 |
1981.09.08 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
STANFORD ROBERT OVSHINSKY |
分类号 |
H01L31/04;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;H01L29/16;H01L31/0376;H01L31/20 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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