| 摘要 |
PURPOSE:To realize the desired phase control even to the signals having the frequencies of several 100MHz or above by using a field effect transistor and a parallel tuning circuit. CONSTITUTION:The gate of a field effect transistor TR12 is connected to an input terminal 11 via a capacitor C1 and the voltage divided by resistances R2 and R3 is applied to the gate of the TR12 as the bias voltage. A parallel tuning circuit 16 is connected between the drain of the TR12 and a capacitor C5 together with a resistance R7 and a capacitor C3 connected between the source of the TR12 and the C5 respectively. Then the C5 is connected to the gate of a field effect TR13 and the drain of this TR13 is connected to an output terminal 13 via a capacitor C7. In such a constitution, only the phase can be changed without changing the absolute value of a voltage transmission function T.
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