| 摘要 |
PURPOSE:To improve the manufacturing efficiency of a semiconductor device by fusion-bonding a bead to the vicinity of an end face of a Dumet wire while remaining the end face of the wire, etching a pore layer externally exposed, then fusion- bonding a glass case in N2, and sealing a semiconductor element. CONSTITUTION:A bead 2 is fusion-bonded to one end of a Dumet wire 1 formed by superposing a copper 1b and a pore layer 1c on a core wire 1a, is then etched with acid solution, and the copper 1b is exposed. Then, a glass tube 3 is fusion- bonded in N2. A semiconductor element 4 is soldered to the end of the Dumet wire 1, which is wound with bead from the other end of the blass tube, the Dumet wire 5 having C-shaped contact piece is inserted to the end, and the outer periphery of the bead is fusion-bonded to the glass tube. With this configuration, it can eliminate the step of etching with a glass tube, thereby facilitating the work to equalize the etching an cleaning steps. Thus, the bent of the lead wire is reduced to improve the working efficiency, and the glass tube may not be dipped in an acid solution. |
