| 摘要 |
PURPOSE:To obtain an element suited to pick up color image by constructing a photoconductor layer of an amorphous material mainly composed of Si doped to yield an electron or hole blocking layer in a solid pickup device which is provided with a transparent electrode, a photoconductor layer and a scanning circuit in the direction of light incidence. CONSTITUTION:An n<+> type region 11 is formed on the surface of a p type semiconductor substrate 10 and adjacent thereto, a p<+> type region 12 is provided to be a potential barrier and an n<+> type region 13 to be a potential well. Then, the entire surface is covered with a gate oxide film 16 leaving the region 11, which corresponds to the regions 12 and 13 and a first gate electrode 14 is provided on film 16 and covered with an insulator layer 15. Thereafter, a first electrode 17 is applied in contact with the region 11 extending over the entire surface and a p type or an n type amorphous Si layer 18, an i type amorphous Si layer 19 and an n type or a p type amorphous Si layer 20 are laid in layers thereon to be an electron or hole blocking layer. Then, a transparent electrode 21 is applied thereon and the power source 22 is provided between it and the substrate 10. Light 23 enters the side of the electrode 21. |
