| 摘要 |
PURPOSE:To design the circuit of a master slicing system while varying the withstand voltage of a transistor in response to the requirements by forming a diode and a transistor in an isolated common region. CONSTITUTION:An N type epitaxial layer 13 grown on a P type semiconductor substrate 10 is isolated via a P<+> type diffused region 14, the isolated N type region 13 is used as the collector of a transistor 11, a P<+> type base region 15, an N<+> type emitter region 16 and an N<+> type collector electrode pickup region 18 are formed in the collector region, and the P<+> type region 17 of a diode 12 is commonly formed. When the transistor 11 is used for the part necessitating high withstand voltage in the circuit design, a forward diode 12 is used as a collector terminal, and when it is used for the part necessitating low withstand voltage, an ordinary collector terminal is used, or the diode 12 is shortcircuitted with the terminal to be used. |
