| 摘要 |
PURPOSE:To provide a semiconductor device which is compact and easy to manufacture, by a method wherein a plural semiconductor film is selectively formed over a semiconductor substrate on which circuit elemens are constituted and the said film is so composed that it is utilized as a photoelectric converter element. CONSTITUTION:A MOSFET with a poly-Si gate electrode 4 is composed on a P type Si substrate, and a thin Hg1-xCdxTe film 7 is prepared on an N type source 2. The film 7 is composed of an N layer 7a ans a P layer 7b, and the layer 7a has ohmic contact with the source 2. An Ni film 8 is added nonrectificatively to the P layer 7b. The Ni film 8 is extended onto an oxidized film 5, holding a ZnS film 9 between them, so that it protects the P-N junction of the films 7a, 7b and insolates the N layer 7a from the Ni film 8. When long wave radiation energy is radiated over the Ni film 8, a carrier is generated in the detecting element 7, transferred into the source 2 and taken out from a drain 3 through an Al film 10 as an output signal. With above configuration, the device can be made compact, its manufacturing process is simplified and the reliability is improved. |
