EPITAXIAL PROCESS FOR PRODUCING VERY SHARP AUTODOPING PROFILES AND VERY LOW DEFECT DENSITIES ON SUBSTRATES WITH HIGH CONCENTRATION BURIED IMPURITY LAYERS

摘要

EPITA~IAL PROCESS FOR PRODUCING VERY SHARP AUTODOPING PROFILES AND VERY LOW DEFECT DENSITIES ON SUBSTRATES WITH ~IGH CONCENTRATION BURIED IMPURITY LAYERS _ _ A method is described for depositing silicon epitaxy with very low defect levels and sharp dopant profiles which are suitable for fabricating high performance, shallow device structures. The epitaxial layer envisioned is less than about 2 microns in thickness. The layer is deposited upon a silicon substrate that has subcollector buried layers therein of above about 1 x 102 baked at between about 1120 ànd then the epitaxial layer is formed using silicon tetrachloride and a temperature of between about 1000