| 发明名称 |
NONNVOLATILE SEMICONDUCTOR MEMORY ELEMENT AND ITS PRODUCTION |
| 摘要 |
PURPOSE:To make a memory element of uniform characteristics by implanting impurity ions of groups III or V in the specified positions within the insulation film over the intermediate region of source and drain thereby making a trap. |
| 申请公布号 |
JPS53110482(A) |
申请公布日期 |
1978.09.27 |
| 申请号 |
JP19770026284 |
申请日期 |
1977.03.09 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TSUKAMOTO KATSUHIRO;AKASAKA YOUICHI |
| 分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
