| 摘要 |
PURPOSE:To obtain an electrode of desired height within increasing the capacity of a diode by partly covering an electrode for Schottky barrier formed partly on a P type Si substrate with a metallic film and plating a silver bump electrode on the film. CONSTITUTION:After a Schottky barrier metal electrode 2 of W or the like is formed via an oxidized film 3 on a P type Si substrate 1, a metallic film 5 made of Cr layer 6 and Ag layer 7 is formed thereon, a photoresist is then partly formed, a silver bump electrode 10 is formed by a plating method, and the photoresist film is further removed. Since the capacity of the diode does not exceed the designing value in this manner and the etching of the metallic film is not performed, the height of the silver bump cannot be lowered by the etching. |
