| 摘要 |
PURPOSE:To obtain a photosensor magnified by equl times to an original image by forming a-Si layer having P<+> type N-P-N or P<+> type N-P-N-n<+> laminated layer structure to exhibit avalanche photodiode characteristic. CONSTITUTION:A light transmitting picture element electrode 102 isolated into respective picture elements is formed on a light transmitting substrate 101, and an ohmic layer 103 is formed thereon. A light absorption layer 104 made of N layer doped with B is laminated on the layer 103, and P type and N type layers 105, 106 are laminated to form an avalanche region thereon. The layers 104, 105, 106 contain at least one of halogen elements, and are formed of amophous material containing silicon as a base. An ohmic layer 107 is laminated on the N type layer 106, and a common electrode 108 is provided thereon. |
