| 摘要 |
PURPOSE:To reduce linking loss and to make linking operation easy by making a needle crystal of single crystal grow epitaxially on a substrate of single crystal. CONSTITUTION:In a shown production equipment, a single crystal 1 of the 1st metal on which a very small piece of the 2nd metal is stuck is set. Then, when a gaseous halogenide of the 1st metal and gaseous H2 are introduced into a reaction tube 3, the halogenide of the 1st metal is reduced to an atomic state. If a vapour pressure of atoms of the 1st metal in a gaseous phase comes to supersaturation, the atoms of the 1st metal move into an alloy melt phase, and, before long, the atoms of the 1st metal in the alloy melt phase come to an excess. If, at this time, the temperature of the alloy melt is fixed, a composition of the alloy melt dosn't change, then excess atoms of the 1st metal is deposited on the single crystal 1 of the 1st metal of the solid phase to crystalize epitaxially. Whereby, the alloy melt phase of the 1st- and the 2nd metals is raised upward, and the needle single crystal of the 1st metal whose size is depending on a size of a liquid drop of the alloy melt is formed, thereby, a coupler of a core clad structure is obtained. |
