| 摘要 |
PURPOSE:To improve the rise of unsaturated type characteristics of an IGFET by forming an electrode connected to a source or drain electrode at least one of the sides of the gate insulating film of the IGFET. CONSTITUTION:A conductive layer 6 is formed at least one (the drain side of this case) of the sides of a gate insulating film 4 (gate electrode 5) formed on a semiconductor substrate having a source region 3 and a drain region 2, and is connected to the drain electrode. Since the potential of the sides of the insulating film 4 of the drain region side is maintained equal to the drain potential in this manner, the rise of the drain current of the unsaturated type characteristics is presented at the low drain voltage side, and the FET can be operated with low power source. |
