Semiconductor device.

摘要

A semiconductor device includes p- and n-type semiconductor layers formed on an insulating substrate and an n-type interconnection layer formed to be electrically coupled with said n-type semiconductor layer. The n-type interconnection layer is formed in contact with the p-type semiconductor layer and is set at such a potential as to apply a reverse voltage across the p-n junction between the n-type interconnection layer and p-type semiconductor layer, so as to electrically isolate the n-type interconnection layer from the p-type semiconductor layer.