| 摘要 |
PURPOSE:To increase the density of an IC by selectively oxidizing a polysilicon film, isolating nonoxidative parts on an electrode window from an oxidized part, and thus omitting the selective etching of the polysilicon. CONSTITUTION:SiO2 is selectively opened on the surface of an Si substrate 1 formed through the prescribed steps, polysilicon 4 is superposed, and Si3N4 film 8 is selectively formed with a mask forming an electrode wire. With the film 8 as a mask the polysilicon 4 is thermally oxidized, the part 4b is converted to SiO2, and nonoxidative part 4a is isolated. The film 8 is removed, and aluminum wires 6C, 6E, 6B are attached. Since it is not necessary to selectively etch the polysilicon film with the electrode wires as masks according to this configuration, it is not necessary to provide an allowance of masking upon formation of the electrode wires. Accordingly, the width and hence the interval of the electrode wires can be shortened, and the density of the IC can be increased. |
