| 摘要 |
<p>PURPOSE:To minize resist work by a method wherein a film having a selective ctching property and an anode oxidizing property to tantalum is put between a resistance film and a capacitor film, and used as an etching stopper. CONSTITUTION:The resistance film 11 of tantalum nitride and an Al film 12 are fomed on a substrate 10, the capacitor film 13 of alpha-Ta is made up on the film 12 by means of sputtering, and these films are removed by means of etching leaving a resistance section 14 and a capacitor section 15. A section functioning as an electrode 13' of the capacitor is coated with a resist 16, the capacitor film is formed primarily and an oxide film 17 is built up, and the capacitor film 13 is removed by means of dry etching. The Al film 12 serves as the etching stopper at that time. The Al film is removed by means of etching, the capacitor film 13' is formed secondarily and an oxide film 17' is made up, and the electrodes 19, 20 of the capacitor and a resistance terminal 21 are left from a NiCr-Au film 18 on the film 17'.</p> |
