| 摘要 |
PURPOSE:To improve the yield of a magnetron sputtering method by covering a substrate with particles of target material irradiated through plasma generated in the vicinity of the substrate and forming an insulating film containing no parasitic charge. CONSTITUTION:A target electrode 3 securing, for example, a quartz plate 14 on the upper surface buried with magnets 6, 7 and a supporting electrode 4 securing, for example, a semiconductor substrate 15 confront each other in a bell-jar 1. Plasma generating electrodes 5, 5' are provided at the side faces of the device. Ar gas containing O2 is introduced into the bell-jar 1, is then reduced under pressure, high frequency wave is applied between the electrode 3 and the electrode 2 to sputter the SiO2, the plasma 17 is generated in the vicinity of the substrate 15 with the electrodes 5, 5', and the SiO2 passed through the plasma is covered on the substrate 15. Thus, excessive Si contained in the SiO2 is oxidized, and the parasitic charge of the film can be reduced, and accordingly the yield of the semiconductor device can be improved. |
