| 摘要 |
PURPOSE:To perform the charge injection amount into a double dielectric layer with one type of pulse by connecting in series consecutive gates of double insulating gate type CCD via a voltage drop element, applying a voltage at both ends and injecting charge sequentially increasing thereto. CONSTITUTION:A resistance element 12 is connected between the terminals 11 of various gate electrodes 4 of an MNOS type CCD10, and the terinal 13 is connected via a resistance element 14 to an N type Si substrate 1. When negative voltage pulse 16 is applied between the terminal 15 and the substrate 1, the negative voltage pulse of the magnitude divided by resistors is applied between the respective gate electrodes 4 and the substrate, holes of the quantity corresponding to the applied voltage are injected into an Si3N4/SiO2 layer under the respective gate electrodes 4, and are held. Since the quantity of the holes are sequentially varied and the potential well is sequentially varied in one direction, the unity of the transfer direction in driving the two-phase clock pulse drive can be secured. |
