| 摘要 |
<p>PURPOSE:To obtain a photoconductive member with superior characteristics especially for electrophotography by forming 2 layers of amorphous silicon hydride (a-SiH) with different electric characteristics on a support to form a space-charge layer at the interface between both the layers. CONSTITUTION:On an electrically conductive support 102 a barrier layer 103 is formed with a-SiH contg. 1-40atom% H and converted into p- or n-type a-SiH by doping with an impurity, and on the layer 103 a photoconductive layer 104 is formed with n- or p-type a-SiH contg. 1-40atom% H and reverse to the a-SiH of the layer 103 or i-type a-SiH contg. 1-40atom% H. As a result, a space-charge layer 106 is formed at the interface between the layers 103, 104. For example, carriers having the same polarity as minor carriers (electrons) in the p-type layer 103 are inhibited from implantation into the layer 104, and among carriers generated in the layer 104 by irradiating the layer with electromagnetic waves, carriers having the same polarity as major carriers (holes) in the layer 103 move easily toward the layer 103. Thus, a photoconductive member 101 with superior characteristics such as high photosensitivity and less deterioration due to light is obtd.</p> |
