Negative-working resists for recording high-energy radiation.

摘要

Novel resists for recording high-energy radiation exposure are described. The resists comprise acrylic copolymers having from 50 to 95 mole percent of recurring units of the structure:
<CHEM>
and from 5 to 50 mole percent of recurring units of the structure:
<CHEM>
wherein R and R<1> are each hydrogen or methyl; R<2> is -R<4>-CH=CH2 or 3-norbornenyl group; R<3> and R<4> are each independently alkylene having from 1 to 3 carbon atoms; T is an -O- or a -NH- group;. The resists have improved sensitivity to high-energy radiation exposure and improved resistance to plasma etching.