| 摘要 |
<p>This invention relates to improvements in the SOS technology including the so-called laser annealing processing. According to this invention, the semiconductor layer (2) of an SOS structure (1, 2) consists of the three layers of an interface layer made up of twins, a seed crystalline layer and a re-grown layer far thicker than the preceding two layers when viewed from the side of an insulating substrate. The re-grown layer is formed in such a way that the semiconductor layer (2) deposited on the insulating substrate (1) is irradiated with an electromagnetic wave, for example, a pulsed ruby laser beam, which is absorbed substantially uniformly by a portion except the interface layer and the seed crystalline layer. According to this invention, the quality of the re-grown layer is improved, and the mobility of carriers is enhanced. As a result, the operating speed of a semiconductor device employing the SOS structure (1, 2) is raised, and the leakage current is reduced.</p> |
