| 摘要 |
PURPOSE:To enable the part recover of the lifetime of a semiconductor integrated circuit device by annealing other elements than one which is to be reduced in its lifetime while contacting a high thermal conductivity metal with the other elements when reducing the lifetime of the one element of main circuit forming a high withstand voltage semiconductor IC having high noise resistance obtained by emitting an electron beam to the entirety of the IC. CONSTITUTION:When an electron beam is emitted to the overall surface of a semiconductor IC for the purpose of improving its lifetime and the part which is unnecessary to improve the lifetime is recovered by annealing, a metal having high thermal conductivity is contacted with the surface of the part which should not be recovered in its lifetime and hence the part which should not be annealed, and the surface area is increased. Thus, the surface temperature of the metal contacting part is cooled lower than the surface temperature of the other part, is thus partly annealed to partly recover the lifetime. |
