发明名称 SEMICONDUCTOR PRESSURE CONVERTER
摘要 PURPOSE:To reduce the residual stress and to contrive to improve the output stability for the subject pressure converter by a method wherein an adhesive layer is provided only at the supporting section of the single crystal substrate, on which a diaphragm has been formed, and the adhesive surface of a base. CONSTITUTION:A concaved section 12 is provided on the back of an Si substrate 1, a diffusion resistor 14 and an electrode 15 are formed on the diaphragm 11 using an SiO2 film 17 as a mask, they are protected by an SiO2 film 18 and are connected (16) to a teminal pin 5. The adhesion layer 3 is formed at a supporting section 13 and the adhesion surface of a base 2 and a hole 31 is provided at the center section. The base 2 has the quality of material of the linear expansion coefficient equal to an Si single crystal, the adhesion layer 3 consists of the lead glass having a low melting point, the base 2 is adhered to a stem 4, a pin 5 is sealed 41 and the cap 6 having a pressure lead-in port 61 is welded. According to this constitution, as the residual stress after adhesion is small and the adverse effect which will be given to the diaphragm is largely reduced, the temperature drift of the output is small and a highly precise and stabilized device can be obtained.
申请公布号 JPS56164581(A) 申请公布日期 1981.12.17
申请号 JP19800067377 申请日期 1980.05.21
申请人 FUJIKURA LTD 发明人 GOSHIMA HIDEAKI;SHINMEN TOORU;ASANO MITSUHIKO;HASHIMOTO HIROKAZU
分类号 G01L9/04;G01L9/00;H01L29/84 主分类号 G01L9/04
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