| 摘要 |
PURPOSE:To treat quantity of charge to its saturated value by applying higher voltage than one of charge transfer pulse voltage to a transfer electrode when charges within a photoelectric conversion part are injected to a charge transfer element. CONSTITUTION:Charges generated by light incident to a P-N junction diode 1 are stored for a given period of time, transffered to a charge transfer element 3 by a transfer gate electrode 2 and read out from output part 4. In this instance, higher pulse voltage than transfer pulse voltage is applied to a transfer electrode of the element 3 and deep potential is formed under the transfer electrode. After that, pulse voltage is applied to the electrode 2 and charges of the diode 1 are transffered to a part under the transfer electrode. And then the electrode 2 is closed, the transferred charges are stored under the transfer electrode of the element 3. Next, pule voltage at the transfer electrode is made to be the first transfer pulse voltage and the charges are transffered. |
