| 摘要 |
MIS structures for use in testing during the manufacture of an IC are provided with gate source and drain electrodes (27, 25, 26) of heat resistant material (e.g. polysilicon, Mo, W, Ti, or Ta). This permits tests to be made at an early stage in the production before the formation of aluminium extension electrodes for the other devices in the IC. The test structures preferably use polysilicon layers formed at the same time as gate electrodes for MISFETs forming a logic circuit in the IC. <IMAGE> |
