| 发明名称 |
APPLICATION OF ALLYL TELLURIDE AND II-VI EPITAXIAL FILM IN GROWTH OF MOCVD |
| 摘要 |
Methyl allyltelluride is described for use in a process for depositing group II-VI epitaxial films in semiconductor manufacture. The films are grown on crystalline substrates in a MOCVD reactor. |
| 申请公布号 |
JPS63283032(A) |
申请公布日期 |
1988.11.18 |
| 申请号 |
JP19880083222 |
申请日期 |
1988.04.06 |
| 申请人 |
AMERICAN CYANAMID CO |
发明人 |
DONARUDO BARENTAIN JIYUNIA;DANKAN UIRIAMU BURAUN |
| 分类号 |
C01B19/04;C07C67/00;C07C325/00;C07C395/00;C30B25/02;C30B29/48;H01L21/365 |
主分类号 |
C01B19/04 |
| 代理机构 |
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| 主权项 |
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