发明名称 |
Method for forming a lightly doped source and drain structure using an L-shaped spacer |
摘要 |
A method for forming an L-shaped spacer using a sacrificial organic top coating, then using the L-shaped spacer to simultaneously implant lightly doped source and drain extensions through the L-shaped spacer while implanting source and drain regions beyond the L-shaped spacer. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiments, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer. Impurity ions are implanted into the surface of the semiconductor structure forming lightly doped source and drain extensions where the ions are implanted through the L-shaped spacer, and forming source and drain regions beyond the L-shaped spacer where the ions are implanted without passing through the L-shaped spacer.
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申请公布号 |
US6156598(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19990460113 |
申请日期 |
1999.12.13 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
ZHOU, MEI SHENG;PRADEEP, YELEHANKA RAMACHANDRAMURTHY;YU, JIE;LEUNG, YING KEUNG |
分类号 |
H01L21/265;H01L21/311;H01L21/336;H01L21/8238;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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