| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an electrostatic chuck the electrostatic force of which attenuates in a short time even in a low-temperature region, by setting the electrostatic force remaining time, specific volume resistance, and specific inductive capacity of the chuck and the thickness, etc., of an insulating layer or protective film from the equivalent circuit of the chuck by using a specific formula. SOLUTION: An electrode 3 formed between a substrate 1 and an insulating layer 2 is connected to a DC power source 5 through a lead wire 4 and a semiconductor wafer W is directly connected to an earth or electrically connected to the earth with plasma. In order to make the electrostatic force remaining time of an electrostatic chuck shorter than that of an ordinary chuck, the specific volume resistance, etc., of the insulating layer 2 are set so that ts<60 (formula I) and ts=1.731×10-11ρ(εr+d/σ) (formula II) may be met. In the formulae, ts,ρ, andεr respectively represent the time (seconds) required until the remaining electrostatic force attenuates to 98% of the saturated electrostatic force, the specific volume resistance value (Ωm) of the insulating layer 2, and the specific inductive capacity of the layer 2 at the operating temperature of the chuck. In addition, (d) andσrespectively represent the interval (thickness) (m) between an internal electrode and the surface of the insulating layer 2 and the gap (m) between an object to be attracted and the surface of the layer 2.</p> |
