发明名称 |
Method and apparatus for plasma etching. |
摘要 |
<p>A method and an apparatus for plasma etching specimens 4 by providing an intermediate electrode 7 between the electrodes 1, 2 in parallel plates type plasma etching apparatus, moving the intermediate electrode 7 by a drive means8, and continuously changing from the condition ofthe high input power and high self-biasvoltage tothe condition of the low input power and low self-bias voltage while varying the distance between the intermediate electrode 7 and the first electrode 1 and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the specimen 4 is being subjected to processing.</p> |
申请公布号 |
EP0040081(A2) |
申请公布日期 |
1981.11.18 |
申请号 |
EP19810302077 |
申请日期 |
1981.05.11 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIBAYAMA, HIKOU;OGAWA, TETSUYA;KOSUGI, MAKOTO;HISATSUGU, TOKUSHIGE;KOBAYASHI, KOICHI |
分类号 |
H01J37/32;H01J37/34;H01L21/311;(IPC1-7):01L21/306;01L21/31;23F1/02 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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