发明名称 SPUTTERING TECHNIQUE FOR THE DEPOSITION OF INDIUM OXIDE
摘要 <p>of the Invention Consistent properties for indium oxide films deposited by cathode sputtering over a wide range of outgassing conditions are obtained by adjusting the flow rate of oxygen to maintain a constant discharge current while adjusting the flow rate of argon to maintain a constant pressure in the sputtering chamber.</p>
申请公布号 CA1112601(A) 申请公布日期 1981.11.17
申请号 CA19780310058 申请日期 1978.08.25
申请人 PPG INDUSTRIES, INC. 发明人 GILLERY, FRANK H.
分类号 C03C17/245;C23C14/00;(IPC1-7):23C15/00 主分类号 C03C17/245
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