发明名称 Light emitting display device with thin film transistor having organic and inorganic insulating films
摘要 A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the group consisting of aluminum nitride, aluminum nitride oxide, and aluminum oxynitride formed over the first insulating film, an anode formed in contact with the second insulating film, a light emitting layer formed over the anode, and a cathode formed over the light emitting layer.
申请公布号 US7190114(B2) 申请公布日期 2007.03.13
申请号 US20050120852 申请日期 2005.05.03
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAGATA HIROKAZU;IKEDA HISAO;ADACHI YOSHIMI;MIYAGI NORIKO;ARAO TATSUYA;ONO KOJI
分类号 H01L27/32;H01L51/00;H01L51/52 主分类号 H01L27/32
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