| 摘要 |
PURPOSE:To improve the yield rate of manufacture for the subject light emitting device by a method wherein a narrow-stripe of mesa structure is formed after performing the process of the first epitaxial growth including an active layer, a mesa stripe is removed after performing the process of the second epitaxial growth and then the process of the third epitaxial growth is performed. CONSTITUTION:The narrow-stripe of mesa structure is formed after performing the process of the first epitaxial growth including the active layer 13, a mesa stripe is removed after performing the process of the second epitaxial growth and then the process of the third epitaxial growth is performed. For example, on an N type InP substrate 11 having the main surface orientation of (001) and the cleavage plane orientation of (100), an N type InP buffer layer 12, including the active layer 13, is formed. Then, a P type InP current blocking layer 16, an N type InP current confining layer 17, a P type InP clad layer 14 and a P type InGaAsP cap layer are formed. Through these procedures, the yield rate of the semiconductor light emitting device can be improved. |
