发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To decrease influences caused by temperature changes at the measurement of an absolute pressure by a method wherein resistance values in a strainless state are kept set in order that the resistance values of individual gauge resistors arranged on a diaphragm are made almost same within the range of the pressures used. CONSTITUTION:The gauge resistors R1-R4 by diffused layers are formed on, for example, the diaphragm 2 of an Si substrate 1 of a (100) surface azimuth, and an Si pedestal 4 is attached to the gauge resistors and the diaphragm 2 is made a vacuum chamber 3 on the rear to make the absolute pressure measuring sensor. The resistance values of the respective gauge resistors in the strainless state are designed and set up in such a manner that the group of R1, R3 increased in the resistance by being pressurized is made smaller as much as offset value at the use than the group of R2, R4 decreased in the resistance. Thereby, the resistance values of the respective gauge resistors within the range of the pressures used are made almost same, so that the absolute pressure slightly influences by the temperature changes can be measured.
申请公布号 JPS56140670(A) 申请公布日期 1981.11.04
申请号 JP19800044216 申请日期 1980.04.04
申请人 FUJIKURA LTD 发明人 SHINMEN TOORU;ASANO MITSUHIKO;GOSHIMA HIDEAKI;HASHIMOTO HIROKAZU
分类号 H01L29/84;(IPC1-7):01L29/84 主分类号 H01L29/84
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