发明名称 HIGH FREQUENCY AMPLIFIER
摘要 PURPOSE:To reduce the mutual modulation component, by connecting the element having a low impedance to the frequency less than the frequency band of the desired amplified signal between the input terminal of a transistor and the earth. CONSTITUTION:A connection is secured for the base b1 of the transistor TR1 by the coils L1 and L2 plus coupling capacitor C2 to ensure a matching over a wide band. The chock coil CH1 and by-passing capacitor C3 are connected between the base b1 and emitter e1 of the transistor TR1. Thus, a short circuit is given with a low frequency to the area between the base b1 and the emitter e1. Accordingly the level can be reduced for the spurious signal caused by the 3-dimensional distortion property of the transistor.
申请公布号 JPS56140709(A) 申请公布日期 1981.11.04
申请号 JP19800042979 申请日期 1980.04.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UENO TOMOKI;MOROTOMI TETSUAKI
分类号 H03F3/19;(IPC1-7):03F3/19 主分类号 H03F3/19
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